Photocurrent Response Characteristics of ZnO/TiO2 Nano Thin Films on Si/SiO2 Substrate Using Sol-Gel Method

Document Type : Research Article

Authors

1 College of Science, University of Babylon, IRAQ

2 Department of Physics, College of Science, University of Babylon, Babylon, IRAQ

3 Department of Physics, College of Science, Al-Karkh University of Science, Baghdad, IRAQ

Abstract

The Sol-Gel method synthesizes ZnO@TiO2 thin film structures on Si/SiO2 substrates, particularly enhancing photocurrent response and photovoltaic characteristics. Using the Sol-Gel method, the study aims to provide insights into the features and implications of the photocurrent response under visible light illumination. Examining various parameters such as current amplitude, resistivity, rise time, fall time, rise time to fall time ratio, and photocurrent amplitude to rise time/fall time ratio, this research seeks to understand the performance of the synthesized thin film structures. Among the studied delicate film structures, the hybrid ZnO: TiO2 exhibits the highest current responsiveness, while TiO2 and TiO2/ZnO demonstrate dark everyday phenomena. These findings hold significance for optimizing the design of photovoltaic devices utilizing the Sol-Gel method. By investigating ZnO@TiO2 thin film structures on Si/SiO2 substrates using the Sol-Gel method, this research provides valuable insights into these structures' performance and potential applications in photovoltaics. The results contribute to advancing renewable energy technologies and guide the development of efficient photovoltaic devices.

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